Growth and Characterization of Direct-connecting AlGaAs/GaAs TJS Light Emitting Device on SI GaAs Substrate by LPE

✍ Scribed by Dr. L. B. Chang; Dr. H. Lan

• Publisher: John Wiley and Sons
• Year: 1992
• Tongue: English
• Weight: 483 KB
• Volume: 27
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.2170270306

✦ Synopsis

Growth and Characterization of Direct-connecting AlGaAs/GaAs TJS Light Emitting Device on SI GaAs Substrate by LPE High output power (above 3 mW/facet) AlGaAs/GaAs Transverse-Junction Stripe light emitting diodes have been grown on Semi-Insulating (100) GaAs substrates by Liquid Phase Epitaxy. These light emitting diodes utilize a "Direct-connecting" transverse-junction stripe structure, which can confine the transverse-current and reduce the series resistance. By thinning the thickness of the "effective active-layer'' of this structure, a room-temperature pulsed lasing operation is also achieved with a threshold current as low as 35 mA and a peak wavelength around 904 nm. This "Direct-connecting" transverse-junction stripe structure may be a pathway to monolithically integrate a Transverse-Junction Stripe light emitting device with a Metal-Semiconductor Field Effect Transistor on an electrical isolated semi-insulating substrate in the future.