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Characterization of radiation damage induced by B and B4 ion implantation into silicon

✍ Scribed by J.H. Liang; Y.Z. Chen; C.M. Lin

Book ID
113823506
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
611 KB
Volume
269
Category
Article
ISSN
0168-583X

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πŸ“œ SIMILAR VOLUMES

Radiation damage and amorphization of si
Radiation damage and amorphization of silicon by 2 MeV nitrogen ion implantation
✍ J.K.N. Lindner; R. Zuschlag; E.H. te Kaat πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 359 KB

Radiation damage and amorphization of (111) silicon after 2 MeV 14N ion implantation at temperatures from 125 to 450 K is studied in a dose range of 2 x 10 ~3 to 5 x 10 ~7 N cm -2 mainly by optical reflectivity depth profiling. Over a wide range of doses and temperatures, damage can be described by