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Characterization of InGaGdN layers prepared by molecular beam epitaxy

✍ Scribed by Siti Nooraya Mohd Tawil; Rina Kakimi; Daivasigamani Krishnamurthy; Shuichi Emura; Hiroyuki Tambo; Shigehiko Hasegawa; Hajime Asahi


Book ID
112183053
Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
241 KB
Volume
4
Category
Article
ISSN
1862-6254

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Studies on the InGaGdN/GaN magnetic semi
✍ S.N.M. Tawil; D. Krishnamurthy; R. Kakimi; S. Emura; S. Hasegawa; H. Asahi πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 348 KB

InGaGdN single-layer and InGaGdN/GaN superlattice (SL) structures were grown on the MOVPE-grown GaN (0 0 0 1) template substrates by radio frequency molecular beam epitaxy. X-ray diffraction spectroscopy and X-ray absorption fine structure data showed no existence of a secondary phase such as GdN or