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Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy

✍ Scribed by Tsutomu Iida; Kentaro Harada; Shinji Kimura; Takayuki Shima; Hiroshi Katsumata; Yunosuke Makita; Hajime Shibata; Naoto Kobayashi; Shin-ichiro Uekusa; Tokue Matsumori; Kazuhiro Kudo

Book ID: 113286806
Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 402 KB
Volume: 106
Category: Article
ISSN: 0168-583X
DOI: 10.1016/0168-583x(95)00691-5

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