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Characterization of GaN films etched using reactive ion etching technique by secondary ion mass spectrometry

✍ Scribed by Y. Naoi; Y. Kawakami; T. Nakanishi; Y. Lacroix; Y. Shintani; S. Sakai

Book ID: 104420563
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 132 KB
Volume: 4
Category: Article
ISSN: 1369-8001
DOI: 10.1016/s1369-8001(02)00016-1

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