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Characterization of physical-chemical drivers of Hg1−xGdxTe etch rate using time of flight—Secondary ion mass spectrometry and optical interferometry

✍ Scribed by R. Olshove; G. Garwood; E. Pettijohn; R. Emerson; F. Lua; E. Olson; J. Bangs

No coin nor oath required. For personal study only.

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