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Characterization of beryllium-implanted GaAsP/GaP strained-layer superlattice structure

✍ Scribed by M.C. Shrivastava; S. Swaminathan


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
265 KB
Volume
195
Category
Article
ISSN
0040-6090

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Effect of strain on the electronic struc
✍ En-Ge Wang πŸ“‚ Article πŸ“… 1991 πŸ› Elsevier Science 🌐 English βš– 358 KB

We have used the recursion method to calculate bulk and surface electronic structures of a (GaP)l/(InP)l (111) strained-layer superlattice. The obtained energy gap for the stable superlattice is 1.88eV. which is smaller by 0.31eV than the average of the gaps of bulk GaP(2.9leV) and InP(1.48eV). We s