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Characterization of GaP / InGaP and GaP / GaAsP strained-layer quantum wells grown by metalorganic chemical vapor deposition

✍ Scribed by J.G. Neff; M.R. Islam; R.V. Chelakara; K.G. Fertitta; F.J. Ciuba; R.D. Dupuis

No coin nor oath required. For personal study only.

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