This volume is devoted to the consideration of the use use of surface, thin film and interface characterization tools in support of silicon-based semiconductor processing. The approach taken is to consider each of the types of films used in silicon devices individually in its own chapter and to disc
Characterization in Silicon Processing
โ Scribed by Strausser, Yale
- Publisher
- Elsevier
- Year
- 1993
- Tongue
- English
- Leaves
- 249
- Category
- Library
No coin nor oath required. For personal study only.
โฆ Synopsis
This book reviews techniques by which silicon processing engineers working with semiconductors can meet the demands for improved material quality and performance made necessary by increasingly stringent requirements, such as decreasing barrier film thicknesses. Among the techniques described are monitoring the effectiveness of surface cleaning processes; determining the amount of silicon consumption during barrier film and silicide growth; and silicon selective epitaxial growth.
โฆ Table of Contents
Content:
Front Matter
Preface to Series
Preface
Table of Contents
1. Application of Materials Characterization Techniques to Silicon Epitaxial Growth
2. Polysilicon Conductors
3. Silicides
4. Aluminum- and Copper-Based Conductors
5. Tungsten-Based Conductors
6. Barrier Films
Appendix: Technique Summaries
Index
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