Chemical Mechanical Polishing in Silicon Processing
✍ Scribed by R.K. Willardson and Eicke R. Weber (Eds.)
- Publisher
- Academic Press
- Year
- 1999
- Tongue
- English
- Leaves
- 325
- Series
- Semiconductors and Semimetals 63
- Category
- Library
No coin nor oath required. For personal study only.
✦ Synopsis
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
✦ Table of Contents
Content:
Edited by
Pages ii-iii
Copyright page
Page iv
Preface
Pages xi-xiii
Shin Hwa Li, Robert O. Miller
List of Contributors
Page xv
Chapter 1 Introduction Original Research Article
Pages 1-4
Frank B. Kaufman
Chapter 2 Equipment Original Research Article
Pages 5-45
Thomas Bibby, Karey Holland
Chapter 3 Facilitization Original Research Article
Pages 47-87
John P. Bare
Chapter 4 Modeling and Simulation Original Research Article
Pages 89-137
Duane S. Boning, Okumu Ouma
Chapter 5 Consumables I: Slurry Original Research Article
Pages 139-153
Shin Hwa Li, Bruce Tredinnick, Mel Hoffman
Chapter 6 CMP Consumables II: Pad Original Research Article
Pages 155-181
Lee M. Cook
Chapter 7 Post-CMP Clean Original Research Article
Pages 183-214
François Tardif
Chapter 8 CMP Metrology Original Research Article
Pages 215-244
Shin Hwa Li, Tara Chhatpar, Frederic Robert
Chapter 9 Applications and CMP-Related Process Problems Original Research Article
Pages 245-281
Shin Hwa Li, Visun Bucha, Kyle Wooldridge
Index
Pages 283-287
Contents of Volumes in this Series
Pages 289-307
📜 SIMILAR VOLUMES
<p>This book focuses on the mechanical properties of silicides for very large scale integration (VLSI) applications. It presents the fabrication process for bulk silicides and thin films, and list complete testing deformation for a variety of silicon based compounds. The author also presents disloca
This book reviews techniques by which silicon processing engineers working with semiconductors can meet the demands for improved material quality and performance made necessary by increasingly stringent requirements, such as decreasing barrier film thicknesses. Among the techniques described are mon
Тезис доклада. 12th International Conference of International Association for Computer Methods and Advances in Geomechanics (IACMAG), 2008, Goa, India. – P. 344-352.<div class="bb-sep"></div>Название на русском языке: Моделирование механизма обработки при магнитно-абразивном полировании.<div class="
This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many te
<p><p>This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the trib