Impurity Doping Processes in Silicon

✍ Scribed by F.F.Y. WANG (Eds.)

Publisher: Elsevier Science Ltd
Year: 1981
Tongue: English
Leaves: 645
Series: Materials Processing: Theory and Practices 2
Category: Library

No coin nor oath required. For personal study only.

✦ Synopsis

This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method

✦ Table of Contents

Content:
Front Matter
Page iii

Copyright page
Page iv

Introduction to the Series
Page v
Franklin F.Y. WANG

Preface to Volume 2
Page vi
Franklin F.Y. WANG

Advisory Board
Page vii

CHAPTER 1 - Double-Diffusion Processes in Silicon
Pages 1-53
A.F.W. WILLOUGHBY

CHAPTER 2 - Ion Implantation Processes in Silicon
Pages 55-146
J.L. STONE, J.C. PLUNKETT

CHAPTER 3 - Source Feed Materials in Ion Beam Technology
Pages 147-174
A. AXMANN

CHAPTER 4 - Growth of Doped Silicon Layers by Molecular Beam Epitaxy
Pages 175-215
J.C. BEAN

CHAPTER 5 - Neutron Transmutation Doping of Silicon
Pages 217-257
BOBBIE D. STONE

CHAPTER 6 - Cvd Doping of Silicon
Pages 259-314
MCDONALD ROBINSON

CHAPTER 7 - Concentration Profiles of Diffused Dopants in Silicon
Pages 315-442
RICHARD B. FAIR

CHAPTER 8 - Impurity Profile of Implanted Ions in Silicon
Pages 443-638
H. MAES, W. VANDERVORST, R. VAN OVERSTRAETEN

Subject Index
Pages 639-643

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