Metal Impurities in Silicon-Device Fabrication

✍ Scribed by Dr. Klaus Graff (auth.)

Publisher: Springer Berlin Heidelberg
Year: 1995
Tongue: English
Leaves: 227
Series: Springer Series in Materials Science 24
Category: Library

No coin nor oath required. For personal study only.

✦ Synopsis

Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during silicon sample and device fabrication. The different mechanisms responsible for contamination are discussed, and a survey given of their impact on device performance. The specific properties of main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. The monograph provides a thorough review of the results of recent scientific investigations, as well as of the relevant data and properties of the various metal impurities in silicon.

✦ Table of Contents

Front Matter....Pages I-IX
Introduction....Pages 1-4
Common Properties of Transition Metals....Pages 5-18
Properties of Transition Metals in Silicon....Pages 19-64
Properties of the Main Impurities....Pages 65-110
Properties of Rare Impurities....Pages 111-131
Detection Methods....Pages 132-153
Requirements of Modern Technology....Pages 154-163
Gettering of Impurities....Pages 164-192
Conclusion and Future Trends....Pages 193-196
Back Matter....Pages 197-218

✦ Subjects

Surfaces and Interfaces, Thin Films; Electronics and Microelectronics, Instrumentation; Inorganic Chemistry

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