Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

✍ Scribed by Dr. techn. Peter Pichler (auth.)

• Publisher: Springer-Verlag Wien
• Year: 2004
• Tongue: English
• Leaves: 575
• Series: Computational Microelectronics
• Edition: 1
• Category: Library

✦ Synopsis

Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.

✦ Table of Contents

Front Matter....Pages i-xxi
Fundamental Concepts....Pages 1-75
Intrinsic Point Defects....Pages 77-227
Impurity Diffusion in Silicon....Pages 229-279
Isovalent Impurities....Pages 281-329
Dopants....Pages 331-467
Chalcogens....Pages 469-512
Halogens....Pages 513-536
Back Matter....Pages 537-562

✦ Subjects

Electronics and Microelectronics, Instrumentation;Solid State Physics;Spectroscopy and Microscopy;Optical and Electronic Materials