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Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect

✍ Scribed by Jie Cheng (auth.)

Publisher
Springer Singapore
Year
2018
Tongue
English
Leaves
148
Series
Springer Theses
Edition
1
Category
Library
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✦ Synopsis

This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

✦ Table of Contents

Front Matter ....Pages i-xviii
Introduction (Jie Cheng)....Pages 1-27
Material Removal Mechanism of Cu in KIO4-Based Slurry (Jie Cheng)....Pages 29-48
Material Removal Mechanism of Ru in KIO4-Based Slurry (Jie Cheng)....Pages 49-73
Tribocorrosion Investigations of Cu/Ru Interconnect Structure During CMP (Jie Cheng)....Pages 75-89
Micro-galvanic Corrosion of Cu/Ru Couple in KIO4 Solution (Jie Cheng)....Pages 91-105
Galvanic Corrosion Inhibitors for Cu/Ru Couple During Chemical Mechanical Polishing of Ru (Jie Cheng)....Pages 107-119
Synergetic Effect of Potassium Molybdate and Benzotriazole on the CMP of Ru and Cu in KIO4-Based Slurry (Jie Cheng)....Pages 121-134
Conclusions and Recommendations (Jie Cheng)....Pages 135-137

✦ Subjects

Manufacturing, Machines, Tools

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