<p><p>This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the trib
Advanced Ta-Based Diffusion Barriers for Cu Interconnects
โ Scribed by Rene Hubner
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๐ SIMILAR VOLUMES
Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip,
In Interconnect-centric Design for Advanced SoC and NoC, we have tried to create a comprehensive understanding about on-chip interconnect characteristics, design methodologies, layered views on different abstraction levels and finally about applying the interconnect-centric design in system-on-chip
<p>In <STRONG>Interconnect-centric Design for Advanced SoC and NoC</STRONG>, we have tried to create a comprehensive understanding about on-chip interconnect characteristics, design methodologies, layered views on different abstraction levels and finally about applying the interconnect-centric desig