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Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface

✍ Scribed by J. N. Shenoy; G. L. Chindalore; M. R. Melloch; J. A. Cooper; J. W. Palmour; K. G. Irvine

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Interface properties of metal/oxide/semi

✍ E.D. Atanassova; A.P. Kovtchavzev 📂 Article 📅 1983 🏛 Elsevier Science 🌐 English ⚖ 464 KB

Electrical and physico-chemical characte

✍ T. Billon; E. Bano; L. Di Cioccio; T. Ouisse; P. Lassagne; C. Jaussaud 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 327 KB

Effects of post oxidation annealing on e

✍ Selvi, K. Kalai; DasGupta, Nandita; Thirunavukkarasu, K. 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 633 KB

Metal–Oxide–Semiconductor Interface and

✍ Takashima, Shinya; Li, Zhongda; Chow, T. Paul 📂 Article 📅 2013 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 661 KB

AES study of the SiO2/SiC interface in t

✍ R. Berjoan; J. Rodriguez; F. Sibieude 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 524 KB

Study of interface state density and eff

✍ Campi, J.; Yan Shi; Yanbin Luo; Feng Yan; Zhao, J.H. 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 250 KB