Characterization and growth of oxide films
β Scribed by M.J. Graham; R.J. Hussey
- Book ID
- 117085710
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 844 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0010-938X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The growth and characterization of zirconium oxide (ZrO 2 ) thin films prepared by thermal oxidation of a deposited Zr metal layer on SiO 2 /Si were investigated. Uniform ZrO 2 thin film with smooth surface morphology was obtained. The thermal ZrO 2 films showed a polycrystalline structure. The diel
## Abstract Undoped and Neodymiumβdoped gallium oxide (Ga~2~O~3~) thin films of about 500 nm thickness were successfully grown at different temperatures ranging from 100 up to 600 Β°C by radiofrequency magnetron sputtering. Postβannealing treatments were carried out at 900 Β°C and 1000 Β°C. The obtain