Growth and characterization of gallium oxide thin films by radiofrequency magnetron sputtering

✍ Scribed by Marie, P. ;Portier, X. ;Cardin, J.

• Book ID: 105364872
• Publisher: John Wiley and Sons
• Year: 2008
• Tongue: English
• Weight: 349 KB
• Volume: 205
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200778856

✦ Synopsis

Abstract

Undoped and Neodymium‐doped gallium oxide (Ga~2~O~3~) thin films of about 500 nm thickness were successfully grown at different temperatures ranging from 100 up to 600 °C by radiofrequency magnetron sputtering. Post‐annealing treatments were carried out at 900 °C and 1000 °C. The obtained films were (400) textured and a grain size of a few tens of nanometres was found. Optical and electrical characterizations led to a figure of merit of about 1.9 × 10^–4^. These films were successfully doped with Neodymium by a co‐sputtering method. The photoluminescence experiments for the Nd‐doped β‐Ga~2~O~3~ films clearly showed the rare‐earth emitting signature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)