Growth and characterization of gallium o
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Marie, P. ;Portier, X. ;Cardin, J.
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Article
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2008
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John Wiley and Sons
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English
β 349 KB
## Abstract Undoped and Neodymiumβdoped gallium oxide (Ga~2~O~3~) thin films of about 500 nm thickness were successfully grown at different temperatures ranging from 100 up to 600 Β°C by radiofrequency magnetron sputtering. Postβannealing treatments were carried out at 900 Β°C and 1000 Β°C. The obtain