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Growth and characterization of gallium (III) oxide films

✍ Scribed by P. Wu; Y-M. Gao; R. Kershaw; K. Dwight; A. Wold


Book ID
113188178
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
472 KB
Volume
25
Category
Article
ISSN
0025-5408

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Growth and characterization of gallium o
✍ Marie, P. ;Portier, X. ;Cardin, J. πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 349 KB

## Abstract Undoped and Neodymium‐doped gallium oxide (Ga~2~O~3~) thin films of about 500 nm thickness were successfully grown at different temperatures ranging from 100 up to 600 Β°C by radiofrequency magnetron sputtering. Post‐annealing treatments were carried out at 900 Β°C and 1000 Β°C. The obtain