Characteristics of top-surface-emitting GaAs quantum-well lasers
β Scribed by Lee, Y.H.; Tell, B.; Brown-Goebeler, K.; Jewell, J.L.; Burrus, C.A.; Hove, J.M.V.
- Book ID
- 119786241
- Publisher
- IEEE
- Year
- 1990
- Tongue
- English
- Weight
- 311 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1041-1135
- DOI
- 10.1109/68.59351
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The vertical-cavity surface-emitting laser (VCSEL) operating with low threshold current is a promising way to realize future parallel optical interconnects. In this study, we propose a novel structure of p-type delta-doped In-GaAs/GaAs quantum wells for low-threshold, high-speed VCSELs. Edge-emittin
## Abstract The radial heterogeneity of the verticalβcavity surfaceβemitting lasers (VCSEL) structure leads to both heterogeneity of the pumping current radial distributions and propagation conditions of the optical wave. Hence in research, it is necessary to make a more complete account of the car