Advanced model for simulation of surface-emitting quantum-well lasers
✍ Scribed by P. S. Ivanov; V. V. Lysak; I. A. Sukhoivanov
- Book ID
- 102907539
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 628 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0894-3370
- DOI
- 10.1002/jnm.420
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✦ Synopsis
Abstract
The radial heterogeneity of the vertical‐cavity surface‐emitting lasers (VCSEL) structure leads to both heterogeneity of the pumping current radial distributions and propagation conditions of the optical wave. Hence in research, it is necessary to make a more complete account of the carrier transport and photon generation processes of the devices mentioned.
In the given work we investigate a detailed mathematical model of the oxide‐confinement VCSEL with the advanced formulation of the material gain. It is possible to research thermal and speed characteristics of the device and to optimize the geometrical parameters of the laser structure. We consider that it is necessary to have identical radiuses both the oxide window and the quantum well for reduction of the delay time. Moreover, it is proved that the reducing oxide window radius leads to Gaussian distribution of radial photon distribution.
The carried out researches have shown the efficiency of the application of the given model for the analysis of the effects connected with the influence of the non‐linear carrier distribution on the VCSEL behaviour. This method can be useful for VCSEL structure optimization. Copyright © 2001 John Wiley & Sons, Ltd.
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## Abstract A large‐signal equivalent‐circuit model of quantum‐well lasers is developed in this paper. This model is based on three‐level rate equations, including carrier transport effects and the role of the gateway state at the quantum well. The experiential formula of the optical peak gain vari