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Observation of bistability in GaAs quantum-well vertical-cavity surface-emitting lasers

✍ Scribed by Xuefei Tang; van der Ziel, J.P.; Bing Chang; Johnson, R.; Tatum, J.A.


Book ID
117868584
Publisher
IEEE
Year
1997
Tongue
English
Weight
115 KB
Volume
33
Category
Article
ISSN
0018-9197

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The vertical-cavity surface-emitting laser (VCSEL) operating with low threshold current is a promising way to realize future parallel optical interconnects. In this study, we propose a novel structure of p-type delta-doped In-GaAs/GaAs quantum wells for low-threshold, high-speed VCSELs. Edge-emittin