P-type delta-doped InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers

✍ Scribed by Nobuaki Hatori; Akimasa Mizutani; Nobuhiko Nishiyama; Fumichika Motomura; Fumio Koyama; Kenichi Iga

• Publisher: John Wiley and Sons
• Year: 1999
• Tongue: English
• Weight: 127 KB
• Volume: 82
• Category: Article
• ISSN: 8756-663X
• DOI: 10.1002/(sici)1520-6432(199904)82:4<54::aid-ecjb7>3.0.co;2-s

✦ Synopsis

The vertical-cavity surface-emitting laser (VCSEL) operating with low threshold current is a promising way to realize future parallel optical interconnects. In this study, we propose a novel structure of p-type delta-doped In-GaAs/GaAs quantum wells for low-threshold, high-speed VCSELs. Edge-emitting lasers having p-type delta-doped quantum wells were grown by metal-organic chemical-vapor deposition and a low-threshold current density of 152 A/cm 2 (51 A/cm 2 /well) was realized. We also fabricated p-type delta-doped quantum well InGaAs/GaAs VCSELs with a low-resistance GaAs/AlAs distributed Bragg reflector, and achieved a low threshold current of 0.37. Further threshold reduction by controlling the doping concentration in the p-type delta doped layers is expected.