✦ LIBER ✦

InGaAs/GaAs vertical-cavity surface-emitting lasers with AlAs selective oxide layers

✍ Scribed by Nobuaki Hatori; Toshikazu Mukaihara; Noriyuki Ohnoki; Akimasa Mizutani; Makoto Abe; Akihiro Matsutani; Fumio Koyama; Kenichi Iga

Publisher: John Wiley and Sons
Year: 1998
Tongue: English
Weight: 220 KB
Volume: 81
Category: Article
ISSN: 8756-663X
DOI: 10.1002/(sici)1520-6432(199801)81:1<13::aid-ecjb2>3.0.co;2-9

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✦ Synopsis

A laser operating at low threshold current is indispensable for the construction of superparallel optical interconnections. Initially we examine the current threshold characteristics of surface emitting InGaAs/GaAs lasers, and demonstrate the possibility for working with a threshold current below 100 mA. Next, vertical-cavity AlAs oxide layers are used, since they are helpful in achieving a low threshold surface-emitting laser, and the optimum conditions for forming the AlAs oxide layer are determined.

New InGaAs/GaAs surface-emitting lasers with AlAs oxide layer are fabricated and a low threshold current operation of 70 mA is achieved by current injection through micro-domains and reduction of the dark recombination current. Further low threshold current operation should be achievable by fine control and micronization of oxide lay-

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