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GaAs/AlGaAs multiple quantum well GRIN-SCH vertical cavity surface emitting laser diodes

✍ Scribed by Wang, Y.H.; Tai, K.; Wynn, J.D.; Hong, M.; Fischer, R.J.; Mannaerts, J.P.; Cho, A.Y.


Book ID
119786015
Publisher
IEEE
Year
1990
Tongue
English
Weight
264 KB
Volume
2
Category
Article
ISSN
1041-1135

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P-type delta-doped InGaAs/GaAs quantum w
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The vertical-cavity surface-emitting laser (VCSEL) operating with low threshold current is a promising way to realize future parallel optical interconnects. In this study, we propose a novel structure of p-type delta-doped In-GaAs/GaAs quantum wells for low-threshold, high-speed VCSELs. Edge-emittin