CdTe/CuInSe2 multijunction solar cells
โ Scribed by J.D. Meakin; R.W. Birkmire; J.E. Phillips
- Publisher
- Elsevier Science
- Year
- 1987
- Weight
- 52 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0379-6787
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โฆ Synopsis
ture. GaInP2 with good phototuminescence characteristics has been grown by metalorganic chemical vapor deposition using trimethylindium, trimethylgallium and phosphine, Shallow homojunctions in GaInP2, heterotunnel junctions between GaInP2 and GaAs, and full GaInP2/GaAs cascade devices have also been fabricated. Recent progress and results are presented and discussed.
๐ SIMILAR VOLUMES
Multijunction concentrator AIGaAs and GaInAs subcells have been fabricated using metal-organic chemical vapor deposition. Under 400 Suns air mass 1.5, conversion efficiencies as high as 18% have been measured for A1GaAs (1.75 eV) cells grown lattice matched to GaAs. Under similar illumination condit
Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AIGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 p~m h -~. Device quality GaAs and AlxGal\_xAs films were grown with p-type background carbon do