β Scribed by S.A. Hussien; P. Colter; A. Dip; J.R. Gong; M.U. Erdogan; S.M. Bedair
No coin nor oath required. For personal study only.
Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AIGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 p~m h -~. Device quality GaAs and AlxGal_xAs films were grown with p-type background carbon doping in the ranges 1015--1019 cm -3 and 101e-102Β° cm -3 respectively. N-type films were achieved by Sill4 doping, producing carrier concentrations in the range 1018-10 is cm -3. In addition, the potential applications of the ALE technique in the photovoltaic field are discussed.
π SIMILAR VOLUMES
Multijunction concentrator AIGaAs and GaInAs subcells have been fabricated using metal-organic chemical vapor deposition. Under 400 Suns air mass 1.5, conversion efficiencies as high as 18% have been measured for A1GaAs (1.75 eV) cells grown lattice matched to GaAs. Under similar illumination condit
ture. GaInP2 with good phototuminescence characteristics has been grown by metalorganic chemical vapor deposition using trimethylindium, trimethylgallium and phosphine, Shallow homojunctions in GaInP2, heterotunnel junctions between GaInP2 and GaAs, and full GaInP2/GaAs cascade devices have also bee