Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AIGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 p~m h -~. Device quality GaAs and AlxGal\_xAs films were grown with p-type background carbon do
β¦ LIBER β¦
Material aspects of multijunction solar cell research
β Scribed by Subhendu Guha
- Publisher
- Elsevier Science
- Year
- 1987
- Weight
- 54 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0379-6787
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