ture. GaInP2 with good phototuminescence characteristics has been grown by metalorganic chemical vapor deposition using trimethylindium, trimethylgallium and phosphine, Shallow homojunctions in GaInP2, heterotunnel junctions between GaInP2 and GaAs, and full GaInP2/GaAs cascade devices have also bee
β¦ LIBER β¦
Photoluminescence in polycrystalline CuInSe2 solar cells
β Scribed by J.R. Sites; R.E. Hollingsworth
- Publisher
- Elsevier Science
- Year
- 1987
- Weight
- 372 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0379-6787
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