The electron transport in a-Si:H,F/a-Si,Ge:H,F multilayers is analyzed. We use the dark conductivity activation energy Ea, d, its preexponentia[ factor a0, and the photo conductivity activation energy Ea, ph and its exponent q to highlight the asymmetry between transport parallel and perpendicular t
β¦ LIBER β¦
Carrier transport mechanisms in a-Si:H,F/a-Si,Ge:H,F superlattices
β Scribed by J.P. Conde; S. Aljishi; D.S. Shen; M. Angell; S. Wagner
- Book ID
- 118334072
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 181 KB
- Volume
- 97-98
- Category
- Article
- ISSN
- 0022-3093
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Electron transport in a-Si:H,Fa-Si,Ge:H,
β
J.P. Conde; D.S. Shen; V. Chu; S. Wagner
π
Article
π
1989
π
Elsevier Science
π
English
β 324 KB
Optical and transport properties of a-Si
β
J.P. Conde; S. Aljishi; V. Chu; D.S. Shen; S. Wagner
π
Article
π
1988
π
Elsevier Science
β 566 KB
We present dark conductivities and photoconductivities of compositional superlattices (SL) with a-Si:H,F barrier and a-Si,Ge:H,F well layers measured parallel and perpendicular to the plane of the layers. The optical absorption spectra, photogenerated hole collection and electron drift data in these
Carrier scattering at periodic a-Si:H,F
β
J. Kolodzey; R. Schwarz; S. Aljishi; D.-S. Shen; I. Campbell; P.M. Fauchet; S.A.
π
Article
π
1986
π
Elsevier Science
π
English
β 319 KB
a-Si:H,&rlhar2;a-Si, Ge:H, F graded-band
β
Conde, J.P.; Shen, D.; Chu, V.; Wagner, S.
π
Article
π
1989
π
IEEE
π
English
β 534 KB
Steady state and transient transport in
β
S. Aljishi; V. Chu; Z.E. Smith; D.S. Shen; J.P. Conde; D. Slobodin; J. Kolodzey
π
Article
π
1987
π
Elsevier Science
π
English
β 206 KB
Carrier transport in a-Si:H/a-Si:N and a
β
J.-B. ChΓ©vrier; R. Vanderhaghen; C. Swiatkowski; H.-C. Neitzert; M. Kunst
π
Article
π
1993
π
Elsevier Science
π
English
β 277 KB