The electron transport in a-Si:H,F/a-Si,Ge:H,F multilayers is analyzed. We use the dark conductivity activation energy Ea, d, its preexponentia[ factor a0, and the photo conductivity activation energy Ea, ph and its exponent q to highlight the asymmetry between transport parallel and perpendicular t
Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys
โ Scribed by J. Kolodzey; R. Schwarz; S. Aljishi; D.-S. Shen; I. Campbell; P.M. Fauchet; S.A. Lyon; S. Wagner
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 319 KB
- Volume
- 2
- Category
- Article
- ISSN
- 0749-6036
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
We present dark conductivities and photoconductivities of compositional superlattices (SL) with a-Si:H,F barrier and a-Si,Ge:H,F well layers measured parallel and perpendicular to the plane of the layers. The optical absorption spectra, photogenerated hole collection and electron drift data in these
The reaction of dimethylaluminum hydride (DMAH) with a-Si:H:F films prepared by spontaneous chemical vapor deposition (SCVD) has been studied in situ using polarization modulation IR spectroscopy. It is found that SCVD films before DMAH exposure contain SiF2, SiHzF , and Sill 2 species. Upon exposur