In situ IR spectral study of the reaction of a-Si:H:F films with dimethylaluminum hydride

✍ Scribed by Toshimasa Wadayama; Yoshihisa Maiwa; Aritada Hatta

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 434 KB
• Volume: 13
• Category: Article
• ISSN: 0924-2031
• DOI: 10.1016/0924-2031(96)00041-0

✦ Synopsis

The reaction of dimethylaluminum hydride (DMAH) with a-Si:H:F films prepared by spontaneous chemical vapor deposition (SCVD) has been studied in situ using polarization modulation IR spectroscopy. It is found that SCVD films before DMAH exposure contain SiF2, SiHzF , and Sill 2 species. Upon exposure to DMAH at a temperature ranging from 373 to 593 K, the IR bands due to SiF 2 and SiHzF stretch vibrations decrease in intensity, whereas the intensity of the Sill • stretch band increases. These changes are remarkable at high temperature; in particular the Sill 2 stretch band shifts to lower wavenumber with increasing exposure temperature. These results suggest that DMAH reacts with the SiF~ and SiH,F species to form Sill 2 and Sill 3, We also reveal a temperature dependent correlation between the spectral changes and the deposited amounts of A1, as determined by induced coupled plasma analysis.