๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Electron transport in a-Si:H,Fa-Si,Ge:H,F superlattices

โœ Scribed by J.P. Conde; D.S. Shen; V. Chu; S. Wagner

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
324 KB
Volume
6
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

โœฆ Synopsis

The electron transport in a-Si:H,F/a-Si,Ge:H,F multilayers is analyzed. We use the dark conductivity activation energy Ea, d, its preexponentia[ factor a0, and the photo conductivity activation energy Ea, ph and its exponent q to highlight the asymmetry between transport parallel and perpendicular to the layers. The carrier confinement in the wells translates to small, quantitative differences with respect to bulk alloys for parallel transport, but to qualitatively new transport mechanisms for perpendicular transport.

๐Ÿ“œ SIMILAR VOLUMES

Optical and transport properties of a-Si
Optical and transport properties of a-Si:H,F/a-Si,Ge:H,F superlattices
โœ J.P. Conde; S. Aljishi; V. Chu; D.S. Shen; S. Wagner ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science โš– 566 KB

We present dark conductivities and photoconductivities of compositional superlattices (SL) with a-Si:H,F barrier and a-Si,Ge:H,F well layers measured parallel and perpendicular to the plane of the layers. The optical absorption spectra, photogenerated hole collection and electron drift data in these