๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

a-Si:H,&rlhar2;a-Si, Ge:H, F graded-bandgap structures

โœ Scribed by Conde, J.P.; Shen, D.; Chu, V.; Wagner, S.


Book ID
114536230
Publisher
IEEE
Year
1989
Tongue
English
Weight
534 KB
Volume
36
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Electron transport in a-Si:H,Fa-Si,Ge:H,
โœ J.P. Conde; D.S. Shen; V. Chu; S. Wagner ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 324 KB

The electron transport in a-Si:H,F/a-Si,Ge:H,F multilayers is analyzed. We use the dark conductivity activation energy Ea, d, its preexponentia[ factor a0, and the photo conductivity activation energy Ea, ph and its exponent q to highlight the asymmetry between transport parallel and perpendicular t

Optical and transport properties of a-Si
โœ J.P. Conde; S. Aljishi; V. Chu; D.S. Shen; S. Wagner ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science โš– 566 KB

We present dark conductivities and photoconductivities of compositional superlattices (SL) with a-Si:H,F barrier and a-Si,Ge:H,F well layers measured parallel and perpendicular to the plane of the layers. The optical absorption spectra, photogenerated hole collection and electron drift data in these