a-Si:H,&rlhar2;a-Si, Ge:H, F graded-bandgap structures
โ Scribed by Conde, J.P.; Shen, D.; Chu, V.; Wagner, S.
- Book ID
- 114536230
- Publisher
- IEEE
- Year
- 1989
- Tongue
- English
- Weight
- 534 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0018-9383
- DOI
- 10.1109/16.40968
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๐ SIMILAR VOLUMES
The electron transport in a-Si:H,F/a-Si,Ge:H,F multilayers is analyzed. We use the dark conductivity activation energy Ea, d, its preexponentia[ factor a0, and the photo conductivity activation energy Ea, ph and its exponent q to highlight the asymmetry between transport parallel and perpendicular t
We present dark conductivities and photoconductivities of compositional superlattices (SL) with a-Si:H,F barrier and a-Si,Ge:H,F well layers measured parallel and perpendicular to the plane of the layers. The optical absorption spectra, photogenerated hole collection and electron drift data in these