Steady state and transient transport in a-Si, Ge : H, F alloys
โ Scribed by S. Aljishi; V. Chu; Z.E. Smith; D.S. Shen; J.P. Conde; D. Slobodin; J. Kolodzey
- Book ID
- 115986066
- Publisher
- Elsevier Science
- Year
- 1987
- Tongue
- English
- Weight
- 206 KB
- Volume
- 97-98
- Category
- Article
- ISSN
- 0022-3093
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๐ SIMILAR VOLUMES
The electron transport in a-Si:H,F/a-Si,Ge:H,F multilayers is analyzed. We use the dark conductivity activation energy Ea, d, its preexponentia[ factor a0, and the photo conductivity activation energy Ea, ph and its exponent q to highlight the asymmetry between transport parallel and perpendicular t
We present dark conductivities and photoconductivities of compositional superlattices (SL) with a-Si:H,F barrier and a-Si,Ge:H,F well layers measured parallel and perpendicular to the plane of the layers. The optical absorption spectra, photogenerated hole collection and electron drift data in these