The first order C49-C54 phase transition was studied in single TiSi grains embedded in a Si matrix by 2 transmission electron microscopy and X-ray diffraction. The fraction of material transformed into C54 was determined at different times during the annealing in the 700-1100 8C temperature range. T
C49 defect influence on the C49–C54 transition
✍ Scribed by F. La Via; F. Mammoliti; M.G. Grimaldi
- Book ID
- 104306006
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 201 KB
- Volume
- 70
- Category
- Article
- ISSN
- 0167-9317
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The kinetics of the C49-C54 phase transition was analysed in TiSi thin films obtained by reacting a Ti layer deposited on 2 amorphous silicon. The C54 fraction was determined in the temperature range 680-7208C by electrical measurements and by micro-Raman spectroscopy. The Raman spectra were acquire
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