Investigation of C49–C54 TiSi2 transformation kinetics

✍ Scribed by G Ottaviani; R Tonini; D Giubertoni; A Sabbadini; T Marangon; G Queirolo; F La Via

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 265 KB
• Volume: 50
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00276-2

✦ Synopsis

The C49 ⇒ C54 TiSi polymorphic transformation has been investigated trying to elucidate the relative role played by 2 nucleation and growth in silicide formation. Samples having an amorphous layer and C54 seeds have been made by heat treatment of a Ti / Si bi-layer structure and subsequent suitable Ar ion implantation. In situ resistance measurements performed during heat treatments in controlled and purified atmosphere at constant heating rates and ex situ X-ray 4 1 diffraction, MeV He backscattering spectrometry and cross-section transmission electron microscopy have been used to characterize the samples. The results show that in a sample with C49 the C54 nucleation occurs at 8008C; when C54 seeds are present the growth is appreciable already at temperatures as low as 400-5008C. It has also been shown that nucleation and growth of the C49 phase is a process competitive to the growth of the C54 phase.