The C49 ⇒ C54 TiSi polymorphic transformation has been investigated trying to elucidate the relative role played by 2 nucleation and growth in silicide formation. Samples having an amorphous layer and C54 seeds have been made by heat treatment of a Ti / Si bi-layer structure and subsequent suitable
Kinetics of the C49–C54 transformation by micro-Raman imaging
✍ Scribed by S. Privitera; S. Quilici; F. La Via; C. Spinella; F. Meinardi; E. Rimini
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 178 KB
- Volume
- 55
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
✦ Synopsis
The kinetics of the C49-C54 phase transition was analysed in TiSi thin films obtained by reacting a Ti layer deposited on 2 amorphous silicon. The C54 fraction was determined in the temperature range 680-7208C by electrical measurements and by micro-Raman spectroscopy. The Raman spectra were acquired by scanning large silicide areas (100 3 50 mm) and images showing the evolution of the C54 grains at different times and temperatures were obtained. The transformed fraction, the density and size distribution of the C54 grains were measured, and a detailed discussion of the errors associated with the micro-Raman technique is presented. The data indicate that the nucleation rate is not constant and the Johnson-Mehl-Avrami model cannot describe this transition.
📜 SIMILAR VOLUMES
In this work we report the monoclinic-MoO 2 to orthorhombic-MoO 3 transformation induced by continuous wave-laser irradiation. A Helium-Neon laser was used as energy source. The transformation involved two processes: an initial oxidation followed by a transition from a crystalline phase (MoO 2 ) to