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Broadening of the Si doping layer in planar-doped GaAs in the limit of high concentrations

✍ Scribed by R. Rodrigues; P.S.S. Guimarães; J.F. Sampaio; R.A. Nogueira; A.T. Oliveira Jr; I.F. Dias; J.C. Bezerra; A.G. de Oliveira; A.S. Chaves; L.M.R. Scolfaro

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
414 KB
Volume
78
Category
Article
ISSN
0038-1098

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Due to the complicated artefacts in SIMS depth profiling, SIMS depth resolution is difficult to evaluate. For evaluation of the SIMS depth resolution, delta-doped layers are more useful than sharp interfaces, because the matrix effect and the sputtering rate change can be minimized in profiling thro