Broadening of the Si doping layer in planar-doped GaAs in the limit of high concentrations : R. Rodrigueset al. Solid-St. Commun.78(9), 793 (1991)

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 125 KB
• Volume: 32
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(92)90597-e