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Breakdown of gate oxides during irradiation with heavy ions

✍ Scribed by Johnston, A.H.; Swift, G.M.; Miyahira, T.; Edmonds, L.D.


Book ID
118253173
Publisher
IEEE
Year
1998
Tongue
English
Weight
1014 KB
Volume
45
Category
Article
ISSN
0018-9499

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TimeΒ±resolved electrical measurements show transient phenomena occurring during degradation and intrinsic dielectric breakdown of gate oxide layers under constant voltage FowlerΒ±Nordheim stress. We have studied such transients in metal/oxide/semiconductor (MOS) capacitors with an n + poly-crystallin