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Boron activation and diffusion in silicon and strained silicon-on-insulator by rapid thermal and flash lamp annealings

✍ Scribed by Lanzerath, F.; Buca, D.; Trinkaus, H.; Goryll, M.; Mantl, S.; Knoch, J.; Breuer, U.; Skorupa, W.; Ghyselen, B.

No coin nor oath required. For personal study only.

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