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Blue-Laser Structures Grown on Bulk GaN Crystals

✍ Scribed by Prystawko, P. ;Czernecki, R. ;Leszczynski, M. ;Perlin, P. ;Wisniewski, P. ;Dmowski, L. ;Teisseyre, H. ;Suski, T. ;Grzegory, I. ;Bockowski, M. ;Nowak, G. ;Porowski, S.

Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
126 KB
Volume
192
Category
Article
ISSN
0031-8965

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## Abstract Bulk GaN single crystals were grown using a solvent‐thermal method. They were grown for 200 h at 600 Β°C and 800 Β°C using 8 MPa of N~2~ gas and 1–3 mm sized pyramid GaN single crystals. Pure Na, NaN~3~ and Ca were used as the flux. The mole fraction of the [flux]/([flux] + [Ga]) was 0.30