Growth behaviour of bulk GaN single crys
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T. I. Shin; D. H. Yoon
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Article
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2005
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John Wiley and Sons
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English
⚖ 227 KB
## Abstract Bulk GaN single crystals were grown using a solvent‐thermal method. They were grown for 200 h at 600 °C and 800 °C using 8 MPa of N~2~ gas and 1–3 mm sized pyramid GaN single crystals. Pure Na, NaN~3~ and Ca were used as the flux. The mole fraction of the [flux]/([flux] + [Ga]) was 0.30