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Dislocation Reduction in AlN and GaN Bulk Crystals Grown by HVPE

✍ Scribed by Albrecht, M. ;Nikitina, I. P. ;Nikolaev, A. E. ;Melnik, Yu. V. ;Dmitriev, V. A. ;Strunk, H. P.

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
185 KB
Volume
176
Category
Article
ISSN
0031-8965

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✦ Synopsis

We analyse the dislocation distribution in GaN and AlN bulk crystals by transmission electron microscopy and X-ray diffraction. The crystals are grown by hydride vapour phase epitaxy onto 6H-SiC[0001] and Si(111) substrates. Two essentially different dislocation populations are observed: (i) a-type dislocations that show efficient dislocation density reduction (down to 4 Γ‚ 10 5 cm Β± Β±2 ) and (ii) a, (a + c) and c-type dislocations each type in a considerable density with less efficient dislocation reduction. We evaluate the dislocation processes that result in this different behaviour as dependent on the dislocation population.

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