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Bipolar mechanisms present in short channel SOI-MOSFET transistors

✍ Scribed by G. Janczyk


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
238 KB
Volume
45
Category
Article
ISSN
0026-2714

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πŸ“œ SIMILAR VOLUMES


Experimental study on isolation edge eff
✍ Toshiyuki Oishi; Katsuomi Shiozawa; Akihiko Furukawa; Yuji Abe; Yasunori Tokuda; πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 265 KB

We investigate experimentally the isolation edge shape effects on the short channel characteristics, i.e. the gate length dependence, of metal oxide semiconductor field effect transistors (MOSFETs) for various isolation structures, as compared with a reference MOSFET without influence of the isolati