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Bias-Stress-Induced Instability of Polymer Thin-Film Transistor Based on Poly(3-Hexylthiophene)

โœ Scribed by Liu, Y. R.; Liao, R.; Lai, P. T.; Yao, R. H.

Book ID
119999618
Publisher
IEEE
Year
2012
Tongue
English
Weight
568 KB
Volume
12
Category
Article
ISSN
1530-4388

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We report a study on the contact resistance instability induced by the bias stress in staggered pentacene thin film transistors, combining the bias stress measurements with the transfer line method. The contact resistance is increasing with the stress time, and two device parameters are found to con