Origin of bias stress induced instabilit
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Y. Yan; X.J. She; H. Zhu; S.D. Wang
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Article
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2011
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Elsevier Science
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English
โ 606 KB
We report a study on the contact resistance instability induced by the bias stress in staggered pentacene thin film transistors, combining the bias stress measurements with the transfer line method. The contact resistance is increasing with the stress time, and two device parameters are found to con