We present a synchrotron-based XPS investigation on the interface between InAs and Al 2 O 3 or HfO 2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the hi
β¦ LIBER β¦
Band offsets of atomic layer deposited Al2O3 and HfO2 on Si measured by linear and nonlinear internal photoemission
β Scribed by M. Lei; J. H. Yum; S. K. Banerjee; G. Bersuker; M. C. Downer
- Book ID
- 112181132
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 596 KB
- Volume
- 249
- Category
- Article
- ISSN
- 0370-1972
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