Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

✍ Scribed by Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Luo, B.; Kim, J.; Mehandru, R.; Ren, F.; Lee, K. P.; Pearton, S. J.; Osinsky, A. V.; Norris, P. E.

• Book ID: 111689069
• Publisher: American Institute of Physics
• Year: 2002
• Tongue: English
• Weight: 287 KB
• Volume: 80
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.1477273